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 2SK3520-01MR
FUJI POWER MOSFET
2SK3520-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
10
1
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T
D=0.5
10
0
0.2 0.1 0.05
Zth(ch-c) [ C/W]
o
10
-1
0.02 0.01
t
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
10
-2
0
T
D=
t T
10
-3
Maximum ratings and characteristicAbsolute maximum ratings
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
(Tc=25C unless otherwise specified)
Symbol Ratings Unit V VDS 500 A ID 8 A ID(puls] 32 V VGS 30 A IAR *2 8 mJ EAS *1 173 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 2.16 W Tc=25C 35 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C *1 L=4.98mH, Vcc=50V *2 Tch<150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 500V = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation
t [sec]
Equivalent circuit schematic
Drain(D)
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=50V
Avalanche current IAV [A]
10
1
Single Pulse
Gate(G) Source(S)
10
0
10
-1
Electrical characteristics (Tc =25C unless otherwise specified)
-2
10 -8 10
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr
Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 VCC=250V ID=8A VGS=10V L=4.98mH Tch=25C IF=8A VGS=0V Tch=25C IF=8A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
500 3.0
Typ.
Max.
5.0 25 250 100 0.85 1130 150 6.0 21 14 36 9 30 13 8.5 1.50
Units
V V A nA S pF
tAV [sec]
3.5
10 0.65 7 750 100 4.0 14 9 24 6 20 8.5 5.5 1.00 0.65 3.5
ns
nC
8
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
3.57 58.0
Units
C/W C/W
1
2SK3520-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
50 45 40 35 30 20 18 16 14 12
FUJI POWER MOSFET
2SK3520-01MR
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80s Pulse test,Tch=25C
20V 10V 8V 7.0 6.5 6.0 5.5 5.0
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Gate Charge Characteristics
24 22 20 Vcc= 100V 250V 400V
VGS=f(Qg):ID=8A, Tch=25C
max.
18 16
VGS(th) [V]
4.5
ID [A]
25 20 15 10 5 0 0 25 50 75 100 125 150
10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VGS=6.5V 7.0V
VGS [V]
75 100 125 150
PD [W]
7.5V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25
typ.
14 12 10 8 6 4 2 0
min.
50
0
10
20
30
40
50
60
Tc [C]
VDS [V]
Tch [C]
Qg [nC]
Typical Transfer Characteristic
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
100
Typical Transconductance
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
10n
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80s Pulse test,Tch=25C
10 10
1n
Ciss 10
ID[A]
gfs [S]
C [F]
100p
1
Coss
IF [A]
1
3
1 10p Crss 0.1 0.1 0.1 1 10 1p 10
-1
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
10
0
10
1
10
2
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
ID [A]
VDS [V]
VSD [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80s Pulse test, Tch=25C
2.0 1.8 1.6
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10
300
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=8A
VGS=6.5V 2.0
7.0V
7.5V
250 10
2
1.4
tr 200 td(off)
RDS(on) [ ]
8V 1.5
1.0 0.8 0.6
t [ns]
td(on) 10
1
EAV [mJ]
10V 20V
RDS(on) [ ]
1.2 max. typ.
150
1.0
tf
100
0.5
0.4 50 0.2 10
0
0.0 0 5 10 15 20
0.0 -50 -25 0 25 50 75 100 125 150 10
0
0 10
1
0
25
50
75
100
125
150
ID [A]
Tch [C]
ID [A]
starting Tch [ C]
2


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